In digital content distribution systems, digital watermarking (fingerprinting) technique provides a good solution to avoid illegal copying and has been studied very actively. c-Secure CRT Code is one of the most practical ID coding schemes for such fingerprinting since it is secure against collusion attacks and also secure even though random errors are furthermore added. But its usefulness is decreased in the case that random errors are added because the code length will be longer. In this paper, a new collusion attack with addition of random errors is introduced and show that c-Secure CRT Code is not sufficiently secure against the attack at first. Next, we analyze the problem and propose a new ID coding scheme, Randomized c-Secure CRT Code which overcomes the problem. As a result, this new scheme improves the error tracing probabilities against the proposed attack drastically. This new scheme has the same code length, so this is one of the most responsible fingerprinting codes for content distribution systems.

This paper describes the architecture of ReVolver/C40 a scalable parallel machine for volume rendering and its prototype implementation. The most important feature of ReVolver/C40 is view-independent real time rendering of translucent 3D object by using perspective projection. In order to realize this feature, the authors propose a parallel volume memory architecture based on the principal axis oriented sampling method and parallel treble volume memory. This paper also discusses the implementation issues of ReVolver/C40 where various kinds of parallelism extracted to achieve high-perfromance rendering are explained. The prototype systems had been developed and their performance evaluation results are explained. As the results of the evaluation of the prototype systems, ReVolver/C40 with 32 parallel volume memory is estimated to achieve more than 10 frame per second for 2563 volume data on 2562 screen by using perspective projection. The authors also review the development of ReVolver/C40 from several view points.

We demonstrated the uniformity and stability as well as the high breakdown voltage of 0.1-µm-gate InP HEMTs with a double recess structure. To overcome the drawbacks regarding the uniformity and stability in the double recess structure, an InP passivation layer that functions as an etch-stopper and a surface passivator was successfully applied to the structure. It was confirmed that there was no degradation in the uniformity and stability of device performance for the double recess HEMTs that had the breakdown voltages in the on-state and off-state improved by a factor of 1.6.

Software rejuvenation is a proactive fault management technique that has been extensively studied in the recent literature. In this paper, we focus on an example for a telecommunication billing application considered in Huang et al. (1995) and develop the discrete-time stochastic models to estimate the optimal software rejuvenation schedule. More precisely, two software availability models with rejuvenation are formulated via the discrete semi-Markov processes, and the optimal software rejuvenation schedules which maximize the steady-state availabilities are derived analytically. Further, we develop statistically non-parametric algorithms to estimate the optimal software rejuvenation schedules, provided that the complete sample data of failure times are given. Then, a new statistical device, called the discrete total time on test statistics, is introduced. Finally, we examine asymptotic properties for the statistical estimation algorithms proposed in this paper through a simulation experiment.

We describe 150-nm-thick collector InP-based double heterojunction bipolar transistors with two types of thin pseudomorphic bases. The emitter and collector layers are designed for high collector current operation. The collector current blocking is suppressed by the compositionally step-graded collector structure even at JC of over 500 kA/cm2 with practical breakdown characteristics. An HBT with a 20-nm-thick base achieves a high fT of 351 GHz at high JC of 667 kA/cm2, and a 30-nm-base HBT achieves a high value of 329 GHz for both fT and fmax at JC of 583 kA/cm2. An equivalent circuit analysis suggests that the extremely small carrier-transit-delay contributes to the ultrahigh fT.

Richardson and Urbanke developed a powerful method density evolution which determines, for various channels, the capacity of irregular low-density parity-check code ensembles. We develop generalized density evolution for minutely represented ensembles and show it includes conventional representation as a special case. Furthermore, we present an example of code ensembles used over binary erasure channel and binary input additive white Gaussian noise channel which have better thresholds than highly optimized ensembles with conventional representation.

When the Alamouti code is applied (as a space-time block code) to an OFDM system with transmit diversity, the simple Alamouti decoding requires that each subchannel is flat-fading and constant over two symbol periods (Alamouti codeword period). The second requirement makes the Alamouti decoding scheme not suitable for time varying channels. In this Letter, we propose a new decision directed receiver to better accommodate time varying channels.

The virtual memory functions in real-time operating systems have been used in embedded systems. Recent RISC processors provide virtual memory supports through software-managed Translation Lookaside Buffer (TLB) in software. In real-time aspects of the embedded systems, managing TLB entries is the most important because overhead at TLB miss time gives a great effect to overall performance of the system. In this paper, we propose several TLB management algorithms in MIPS processors. In the algorithms, a replaced TLB entry is randomly chosen or managed. We analyze the algorithms by comparing overheads at task switching times and TLB miss times.

High-temperature stability of copper (Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. Samples were annealed at various temperatures to monitor the changes on device performances. Current-voltage performance such as drain-source current, transconductance, threshold voltage and gate leakage current has no obvious degradation up to annealing temperature of 500 and time of 5 minutes. Also up to this temperature, no copper diffusion was found at the Cu and AlGaN interface by secondary ion mass spectrometry determination. At annealing temperature of 700 and time of 5 minutes, device performance was found to have degraded. Gate voltage swing increased and threshold voltage shifted due to Cu diffusion into AlGaN. These results indicate that the Schottky contact and device performance of Cu-gate AlGaN/GaN HEMT is stable up to annealing temperature of 500. Cu is a promising candidate as gate metallization for high-performance power AlGaN/GaN HEMTs.

DC and RF performances of AlGaN/GaN HEMTs are simulated using a two-dimensional device simulator with the material parameters of GaN and AlGaN. The cut-off frequency is estimated as 205 GHz at the gate length of 0.05 µm and the drain breakdown voltage at this gate length is over 10 V. The values are satisfactory for millimeter wavelength power applications. The use of thin AlGaN layers has key importance to alleviate gate parasitic capacitance effects at this gate length.

In this letter, a new output feedback tracking control using a fuzzy disturbance observer (FDO) is proposed and its application to control of a nonlinear system in the presence of the internal parameter perturbation and external disturbance is presented. An FDO using a filtered signal is developed and the high gain observer (HGO) is employed to implement the output feedback tracking control. It is shown in a rigorous manner that all the errors involved can be kept arbitrarily small. Finally, the effectiveness and the feasibility of the suggested method is demonstrated by computer simulation.

This paper investigates the stability problem of singular systems with saturation actuators. A Lyapunov method is employed to give the sufficient conditions for stability of closed-loop systems with saturation actuators. The controller is designed to satisfy the requirement for stability under the nonlinear saturation. In addition, a method is presented for estimating the domain of attraction of the origin.

Hetero-interface properties of SiO2/4H-SiC on (0001), (11-20), and (03-38) crystal orientations are presented. Epitaxial growth on new crystal orientations, (11-20) and (03-38), is described by comparing with the growth on (0001). Using thermal oxidation with wet oxygen, metal-oxide-SiC (MOS) structure was fabricated. From high-frequency capacitance-voltage characteristics measured at 300 K and 100 K, the interface properties were characterized semi-quantitatively. The interface state density was precisely determined using the conductance method for the MOS structure at 300 K. The new crystal orientations have the lower interface state density near the conduction band edge than (0001). From the characteristics of inversion-type planar MOSFETs, higher channel mobilities were obtained on (03-38) and (11-20) than on (0001). The cause of the difference in the channel mobility is speculated by the difference bond configuration of the three crystal orientations.

A low energy plasma based on an electron discharge was investigated for the pre-epi clean of silicon wafers and for plasma enhanced homo and hetero epitaxial growth of Si and SiGe layers. VS were produced in a short, completely dry process sequence consisting of LEPC and LEPECVD only. The wafer/epilayer interface obtained in this process sequence was suitable to grow high quality VS with low surface roughness and dislocation densities. Based on this process and its implementation in a 200/300 mm single wafer cluster tool, a high volume and economical production of VS seems possible.

We study the advantages and limitations of InP/GaAsSb/InP DHBTs for high-speed digital circuit applications. We show that the high-current performance limitation in these devices is electrostatic in nature. Comparison of the location of collector current blocking in various collector designs suggests a smoother, more gradual onset of blocking effects in type-II collectors. A comparison of collector current blocking effects between InP/GaAsSb--based and various designs of InP/GaInAs--based DHBTs provides support for our analysis.

High-frequency characterization and delay-time analysis have been performed for a short channel AlGaN/GaN heterojunction FET. The fabricated device with a short gate length (Lg) of 0.07 µm exhibited an extrinsic current gain cutoff frequency of 81 GHz and a maximum frequency of oscillation of 190 GHz with a maximum stable gain (MSG) of 8.2 dB at 60 GHz. A new scheme for the delay-time analysis was proposed, in which the effects of rather large series resistance RS + RD are properly taken into account. By applying the new scheme to a device with Lg=0.25 µm, we obtained an effective high-field electron velocity of 1.75107 cm/s, which is consistent with our previous results calculated using Monte Carlo simulation.

In order to clarify the mechanism of gate leakage in AlGaN/GaN heterostructure field effect transistors (HFETs), temperature (T)-dependent current-voltage (I-V) characteristics of Ni/n-AlGaN Schottky contact were measured in detail. Large deviations from the thermionic emission transport were observed in I-V-T behavior with anomalously large reverse leakage currents. An analysis based on the thin surface barrier (TSB) model showed that the nitrogen-vacancy-related near-surface donors play a dominant role in the leakage through the AlGaN Schottky interface. As a practical scheme for suppressing the leakage currents, use of an insulated gate (IG) structure was investigated. As the insulator, Al2O3 was selected, and an Al2O3 IG structure was formed on the AlGaN/GaN heterostructure surface after an ECR-N2 plasma treatment. An in-situ XPS analysis exhibited successful formation of an ultrathin stoichiometric Al2O3 layer which has a large conduction band offset of 2.1 eV at the Al2O3/Al0.3Ga0.7N interface. The fabricated Al2O3 IG HFET achieved pronounced reduction of gate leakage, resulting in the good gate control of drain currents up to VGS = +3 V. The maximum drain saturation current and transconductance were 0.8 A/mm and 120 mS/mm, respectively. No current collapse was observed in the Al2O3 IG-HFETs, indicating a remarkable advantage of the present Al2O3-based insulated gate and passivation structure.

We present excellent performance of a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAE of 31% and a gain of 28 dB with an output power (Pout) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.

We have developed a novel self-alignment process using the surface tension of the liquid resin for assembly of electronic and optoelectronic devices. Due to their characteristics of low surface tension, however, the parametric design guidelines are necessary for resin self-alignment capability. In this paper, a shape prediction mathematical model and a numerical method are developed. The developed system is capable of achieving the liquid joint geometry and the parametric design for self-alignment capability. The influences of geometric parameters such as liquid volume, component weight, pad radius, liquid surface tension on the shape of liquid joint are investigated. Furthermore, the parametric design guidelines considered the process-related practical matters of misalignment level, distribution of the supplied liquid volumes and coplanarity deviation includes difference of the height between the pads are provided.

We have developed Thai speech synthesis by rule using cepstral parameters. In order to synthesize the pitch contour of Thai tones, we have applied an extension of Fujisaki's model. A mid tone is unique for Thai when compared to Chinese. For the extension of Fujisaki's model to Thai tones, we assumed that the mid tone is neutral and we adopted its phrase component as the phrase components for all tones. According to our study on the pitch contour of five Thai tones using this model, the result shows that the command pattern for the local F0 components needs both positive and negative commands. Listening tests showed that the intelligibility of the Thai tones measured in terms of error rate were 0.0%, 0.7% and 2.7% for analysis/synthesis, Fujisaki's model and the polynomial model, respectively. Therefore, it is shown that the extension of Fujisaki's model is effective for Thai.