Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.
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Kazuyuki SEO, Kunio SAKAKIBARA, Nobuyoshi KIKUMA, "Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band" in IEICE TRANSACTIONS on Communications,
vol. E93-B, no. 10, pp. 2523-2530, October 2010, doi: 10.1587/transcom.E93.B.2523.
Abstract: Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.
URL: https://global.ieice.org/en_transactions/communications/10.1587/transcom.E93.B.2523/_p
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@ARTICLE{e93-b_10_2523,
author={Kazuyuki SEO, Kunio SAKAKIBARA, Nobuyoshi KIKUMA, },
journal={IEICE TRANSACTIONS on Communications},
title={Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band},
year={2010},
volume={E93-B},
number={10},
pages={2523-2530},
abstract={Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.},
keywords={},
doi={10.1587/transcom.E93.B.2523},
ISSN={1745-1345},
month={October},}
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TY - JOUR
TI - Narrow-Wall-Connected Microstrip-to-Waveguide Transition Using V-Shaped Patch Element in Millimeter-Wave Band
T2 - IEICE TRANSACTIONS on Communications
SP - 2523
EP - 2530
AU - Kazuyuki SEO
AU - Kunio SAKAKIBARA
AU - Nobuyoshi KIKUMA
PY - 2010
DO - 10.1587/transcom.E93.B.2523
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E93-B
IS - 10
JA - IEICE TRANSACTIONS on Communications
Y1 - October 2010
AB - Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below -15 dB.
ER -