Yoshihiro NAKA Masahiko NISHIMOTO Mitsuhiro YOKOTA
Hiroki Hoshino Kentaro Kusama Takayuki Arai
Tsuneki YAMASAKI
Kengo SUGAHARA
Cuong Manh BUI Hiroshi SHIRAI
Hiroyuki DEGUCHI Masataka OHIRA Mikio TSUJI
Hiroto Tochigi Masakazu Nakatani Ken-ichi Aoshima Mayumi Kawana Yuta Yamaguchi Kenji Machida Nobuhiko Funabashi Hideo Fujikake
Yuki Imamura Daiki Fujii Yuki Enomoto Yuichi Ueno Yosei Shibata Munehiro Kimura
Keiya IMORI Junya SEKIKAWA
Naoki KANDA Junya SEKIKAWA
Yongzhe Wei Zhongyuan Zhou Zhicheng Xue Shunyu Yao Haichun Wang
Mio TANIGUCHI Akito IGUCHI Yasuhide TSUJI
Kouji SHIBATA Masaki KOBAYASHI
Zhi Earn TAN Kenjiro MATSUMOTO Masaya TAKAGI Hiromasa SAEKI Masaya TAMURA
Misato ONISHI Kazuhiro YAMAGUCHI Yuji SAKAMOTO
Koya TANIKAWA Shun FUJII Soma KOGURE Shuya TANAKA Shun TASAKA Koshiro WADA Satoki KAWANISHI Takasumi TANABE
Shotaro SUGITANI Ryuichi NAKAJIMA Keita YOSHIDA Jun FURUTA Kazutoshi KOBAYASHI
Ryosuke Ichikawa Takumi Watanabe Hiroki Takatsuka Shiro Suyama Hirotsugu Yamamoto
Toshio MURAYAMA Amane TAKEI
Chan-Liang Wu Chih-Wen Lu
Umer FAROOQ Masayuki MORI Koichi MAEZAWA
Ryo ITO Sumio SUGISAKI Toshiyuki KAWAHARAMURA Tokiyoshi MATSUDA Hidenori KAWANISHI Mutsumi KIMURA
Paul Cain
Arie SETIAWAN Shu SATO Naruto YONEMOTO Hitoshi NOHMI Hiroshi MURATA
Seiichiro Izawa
Hang Liu Fei Wu
Keiji GOTO Toru KAWANO Ryohei NAKAMURA
Takahiro SASAKI Yukihiro KAMIYA
Xiang XIONG Wen LI Xiaohua TAN Yusheng HU
Anton WIDARTA
Tohgo HOSODA Kazuyuki SAITO
Shohei Matsuhara Kazuyuki Saito Tomoyuki Tajima Aditya Rakhmadi Yoshiki Watanabe Nobuyoshi Takeshita
Yihan ZHU Takashi OHSAWA
Shengbao YU Fanze MENG Yihan SHEN Yuzhu HAO Haigen ZHOU
Ryo KUMAGAI Ryosuke SUGA Tomoki UWANO
Jun SONODA Kazusa NAKAMICHI
Kaiji Owaki Yusuke Kanda Hideaki Kimura
Takuya FUJIMOTO
Yuji Wada
Fuyuki Kihara Chihiro Matsui Ken Takeuchi
Keito YUASA Michihiro IDE Sena KATO Kenichi OKADA Atsushi SHIRANE
Tomoo Ushio Yuuki Wada Syo Yoshida
Futoshi KUROKI
Yuya Ichikawa Ayumu Yamada Naoko Misawa Chihiro Matsui Ken Takeuchi
Ayumu Yamada Zhiyuan Huang Naoko Misawa Chihiro Matsui Ken Takeuchi
Yoshinori ITOTAGAWA Koma ATSUMI Hikaru SEBE Daisuke KANEMOTO Tetsuya HIROSE
Hikaru SEBE Daisuke KANEMOTO Tetsuya HIROSE
Takuya SAKAMOTO Itsuki IWATA Toshiki MINAMI Takuya MATSUMOTO
Koji YAMANAKA Kazuhiro IYOMASA Takumi SUGITANI Eigo KUWATA Shintaro SHINJO
Minoru MIZUTANI Takashi OHIRA
Katsumi KAWAI Naoki SHINOHARA Tomohiko MITANI
Baku TAKAHARA Tomohiko MITANI Naoki SHINOHARA
Akihiko ISHIWATA Yasumasa NAKA Masaya TAMURA
Atsushi Fukuda Hiroto Yamamoto Junya Matsudaira Sumire Aoki Yasunori Suzuki
Ting DING Jiandong ZHU Jing YANG Xingmeng JIANG Chengcheng LIU
Fan Liu Zhewang Ma Masataka Ohira Dongchun Qiao Guosheng Pu Masaru Ichikawa
Ludovico MINATI
Minoru Fujishima
Hyunuk AHN Akito IGUCHI Keita MORIMOTO Yasuhide TSUJI
Kensei ITAYA Ryosuke OZAKI Tsuneki YAMASAKI
Akira KAWAHARA Jun SHIBAYAMA Kazuhiro FUJITA Junji YAMAUCHI Hisamatsu NAKANO
Seiya Kishimoto Ryoya Ogino Kenta Arase Shinichiro Ohnuki
Yasuo OHTERA
Haonan CHEN Akito IGUCHI Yasuhide TSUJI
In this research, we investigated the digital/analog-operation utilizing ferroelectric nondoped HfO2 (FeND-HfO2) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN0.5/HfN1.1/HfO2/p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5 nm with the density of interface states (Dit) of 5.3 × 1010 eV-1cm-2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (VFB) was well controlled as 80-100 mV with the input pulses of ±3 V/100 ms controlled by the partial polarization of FeND-HfO2 BL at each 2-bit state operated by the charge injection with the input pulses of +8 V/1-100 ms.
Koji ABE Mikiya KUZUTANI Satoki FURUYA Jose A. PIEDRA-LORENZANA Takeshi HIZAWA Yasuhiko ISHIKAWA
A reduced dark leakage current, without degrading the near-infrared responsivity, is reported for a vertical pin structure of Ge photodiodes (PDs) on n+-Si substrate, which usually shows a leakage current higher than PDs on p+-Si. The peripheral/surface leakage, the dominant leakage in PDs on n+-Si, is significantly suppressed by globally implanting P+ in the i-Si cap layer protecting the fragile surface of i-Ge epitaxial layer before locally implanting B+/BF2+ for the top p+ region of the pin junction. The P+ implantation compensates free holes unintentionally induced due to the Fermi level pinning at the surface/interface of Ge. By preventing the hole conduction from the periphery to the top p+ region under a negative/reverse bias, a reduction in the leakage current of PDs on n+-Si is realized.
Hiroshi OKADA Mao FUKINAKA Yoshiki AKIRA
Effects of Al thickness in Ti/Al/Ti/Au ohmic contact on AlGaN/GaN heterostructures are studied. Samples having Al thickness of 30, 90 and 120 nm in Ti/Al/Ti/Au have been investigated by electrical and X-ray photoelectron spectroscopy (XPS) depth profile analysis. It is found that thick Al samples show lower resistance and formation of Al-based alloy under the oxidized Al layer.
Zhibo CAO Pengfei HAN Hongming LYU
This paper introduces a computer-aided low-power design method for tapered buffers that address given load capacitances, output transition times, and source impedances. Cross-voltage-domain tapered buffers involving a low-voltage domain in the frontier stages and a high-voltage domain in the posterior stages are further discussed which breaks the trade-off between the energy dissipation and the driving capability in conventional designs. As an essential circuit block, a dedicated analytical model for the level-shifter is proposed. The energy-optimized tapered buffer design is verified for different source and load conditions in a 180-nm CMOS process. The single-VDD buffer model achieves an average inaccuracy of 8.65% on the transition loss compared with Spice simulation results. Cross-voltage tapered buffers can be optimized to further remarkably reduce the energy consumption. The study finds wide applications in energy-efficient switching-mode analog applications.
Jun FURUTA Shotaro SUGITANI Ryuichi NAKAJIMA Takafumi ITO Kazutoshi KOBAYASHI
Radiation-induced temporal errors become a significant issue for circuit reliability. We measured the pulse widths of radiation-induced single event transients (SETs) from pMOSFETs and nMOSFETs separately. Test results show that heavy-ion induced SET rates of nMOSFETs were twice as high as those of pMOSFETs and that neutron-induced SETs occurred only in nMOSFETs. It was confirmed that the SET distribution from inverter chains can be estimated using the SET distribution from pMOSFETs and nMOSFETs by considering the difference in load capacitance of the measurement circuits.