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Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

Hiroyuki IECHI, Yasuyuki WATANABE, Hiroshi YAMAUCHI, Kazuhiro KUDO

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Summary :

We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

Publication
IEICE TRANSACTIONS on Electronics Vol.E91-C No.12 pp.1843-1847
Publication Date
2008/12/01
Publicized
Online ISSN
1745-1353
DOI
10.1093/ietele/e91-c.12.1843
Type of Manuscript
Special Section PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category
Transistors

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