We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.
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Hiroyuki IECHI, Yasuyuki WATANABE, Hiroshi YAMAUCHI, Kazuhiro KUDO, "Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 12, pp. 1843-1847, December 2008, doi: 10.1093/ietele/e91-c.12.1843.
Abstract: We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.12.1843/_p
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@ARTICLE{e91-c_12_1843,
author={Hiroyuki IECHI, Yasuyuki WATANABE, Hiroshi YAMAUCHI, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters},
year={2008},
volume={E91-C},
number={12},
pages={1843-1847},
abstract={We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.},
keywords={},
doi={10.1093/ietele/e91-c.12.1843},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters
T2 - IEICE TRANSACTIONS on Electronics
SP - 1843
EP - 1847
AU - Hiroyuki IECHI
AU - Yasuyuki WATANABE
AU - Hiroshi YAMAUCHI
AU - Kazuhiro KUDO
PY - 2008
DO - 10.1093/ietele/e91-c.12.1843
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2008
AB - We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8-12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.
ER -