In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
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Seok Gyu CHOI, Young Hyun BAEK, Jung Hun OH, Min HAN, Seok Ho BANG, Jin-Koo RHEE, "Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 5, pp. 683-687, May 2008, doi: 10.1093/ietele/e91-c.5.683.
Abstract: In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.683/_p
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@ARTICLE{e91-c_5_683,
author={Seok Gyu CHOI, Young Hyun BAEK, Jung Hun OH, Min HAN, Seok Ho BANG, Jin-Koo RHEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics},
year={2008},
volume={E91-C},
number={5},
pages={683-687},
abstract={In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.},
keywords={},
doi={10.1093/ietele/e91-c.5.683},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
T2 - IEICE TRANSACTIONS on Electronics
SP - 683
EP - 687
AU - Seok Gyu CHOI
AU - Young Hyun BAEK
AU - Jung Hun OH
AU - Min HAN
AU - Seok Ho BANG
AU - Jin-Koo RHEE
PY - 2008
DO - 10.1093/ietele/e91-c.5.683
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - In this study, we have performed both the channel modification of the conventional MHEMT (Metamorphic High Electron Mobility Transistor) and the variation of gate recess width to improve the breakdown and RF characteristics. The modified channel consists of the InxGa1-xAs and the InP layers. Since InP has lower impact ionization coefficient than In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. Also, the gate recess width is both functions of breakdown and RF characteristic of a HEMT structure. Therefore, we have studied the breakdown and RF characteristic for various gate recess widths in MHEMT. We have compared breakdown characteristic of the InP-composite channel with that of conventional MHEMT. It is shown that on and off state breakdown voltages of the InP-composite channel MHEMT were increased by about 20 and 27%, respectively, compared with the conventional structure. Also, breakdown voltage of the InP-composite channel MHEMT was increased with increasing gate recess width. The fT was increased with decreasing the gate recess width, whereas fmax was increased with increasing the gate recess width. Also, we extracted small-signal parameters. It was shown that Gd of the InP-composite channel MHEMT is decreased about by 30% compared with the conventional MHEMT. Therefore, the suppression of the impact ionization in the InP-composite channel increases the breakdown voltage and decreases the output conductance.
ER -