The stress effect of SiGe p-type metal oxide semiconductor field effect transistors (MOSFETs) has been investigated to compare their properties associated with the Si0.88Ge0.12/Si epi channels grown on the Si bulk and partially depleted silicon on insulator (PD SOI) substrates. The stress-induced changes in the subthreshold slope and the drain induced barrier lowering were observed small in the SiGe PD SOI in comparison to in the SiGe bulk. Likewise the threshold voltage shift monitored as a function of hot carrier stress time presented excellent stability than in the SiGe PD SOI. Therefore, simply in terms of dc properties, the SiGe PD SOI looks more immune from electrical stresses than the SiGe bulk. However, the 1/f noise properties revealed that the hot carrier stress could introduce lots of generation-recombination noise sources in the SiGe PD SOI. The quality control of oxide-silicon in SOI structures is essential to minimize a possible surge of 1/f noise level due to the hot carrier injection. In order to improve dc and rf performance simultaneously, it is very important to grow the SiGe channels on high quality SOI substrates.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Sang-Sik CHOI, A-Ram CHOI, Jae-Yeon KIM, Jeon-Wook YANG, Yong-Woo HWANG, Tae-Hyun HAN, Deok Ho CHO, Kyu-Hwan SHIM, "Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 5, pp. 716-720, May 2008, doi: 10.1093/ietele/e91-c.5.716.
Abstract: The stress effect of SiGe p-type metal oxide semiconductor field effect transistors (MOSFETs) has been investigated to compare their properties associated with the Si0.88Ge0.12/Si epi channels grown on the Si bulk and partially depleted silicon on insulator (PD SOI) substrates. The stress-induced changes in the subthreshold slope and the drain induced barrier lowering were observed small in the SiGe PD SOI in comparison to in the SiGe bulk. Likewise the threshold voltage shift monitored as a function of hot carrier stress time presented excellent stability than in the SiGe PD SOI. Therefore, simply in terms of dc properties, the SiGe PD SOI looks more immune from electrical stresses than the SiGe bulk. However, the 1/f noise properties revealed that the hot carrier stress could introduce lots of generation-recombination noise sources in the SiGe PD SOI. The quality control of oxide-silicon in SOI structures is essential to minimize a possible surge of 1/f noise level due to the hot carrier injection. In order to improve dc and rf performance simultaneously, it is very important to grow the SiGe channels on high quality SOI substrates.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.5.716/_p
Copy
@ARTICLE{e91-c_5_716,
author={Sang-Sik CHOI, A-Ram CHOI, Jae-Yeon KIM, Jeon-Wook YANG, Yong-Woo HWANG, Tae-Hyun HAN, Deok Ho CHO, Kyu-Hwan SHIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel},
year={2008},
volume={E91-C},
number={5},
pages={716-720},
abstract={The stress effect of SiGe p-type metal oxide semiconductor field effect transistors (MOSFETs) has been investigated to compare their properties associated with the Si0.88Ge0.12/Si epi channels grown on the Si bulk and partially depleted silicon on insulator (PD SOI) substrates. The stress-induced changes in the subthreshold slope and the drain induced barrier lowering were observed small in the SiGe PD SOI in comparison to in the SiGe bulk. Likewise the threshold voltage shift monitored as a function of hot carrier stress time presented excellent stability than in the SiGe PD SOI. Therefore, simply in terms of dc properties, the SiGe PD SOI looks more immune from electrical stresses than the SiGe bulk. However, the 1/f noise properties revealed that the hot carrier stress could introduce lots of generation-recombination noise sources in the SiGe PD SOI. The quality control of oxide-silicon in SOI structures is essential to minimize a possible surge of 1/f noise level due to the hot carrier injection. In order to improve dc and rf performance simultaneously, it is very important to grow the SiGe channels on high quality SOI substrates.},
keywords={},
doi={10.1093/ietele/e91-c.5.716},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel
T2 - IEICE TRANSACTIONS on Electronics
SP - 716
EP - 720
AU - Sang-Sik CHOI
AU - A-Ram CHOI
AU - Jae-Yeon KIM
AU - Jeon-Wook YANG
AU - Yong-Woo HWANG
AU - Tae-Hyun HAN
AU - Deok Ho CHO
AU - Kyu-Hwan SHIM
PY - 2008
DO - 10.1093/ietele/e91-c.5.716
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2008
AB - The stress effect of SiGe p-type metal oxide semiconductor field effect transistors (MOSFETs) has been investigated to compare their properties associated with the Si0.88Ge0.12/Si epi channels grown on the Si bulk and partially depleted silicon on insulator (PD SOI) substrates. The stress-induced changes in the subthreshold slope and the drain induced barrier lowering were observed small in the SiGe PD SOI in comparison to in the SiGe bulk. Likewise the threshold voltage shift monitored as a function of hot carrier stress time presented excellent stability than in the SiGe PD SOI. Therefore, simply in terms of dc properties, the SiGe PD SOI looks more immune from electrical stresses than the SiGe bulk. However, the 1/f noise properties revealed that the hot carrier stress could introduce lots of generation-recombination noise sources in the SiGe PD SOI. The quality control of oxide-silicon in SOI structures is essential to minimize a possible surge of 1/f noise level due to the hot carrier injection. In order to improve dc and rf performance simultaneously, it is very important to grow the SiGe channels on high quality SOI substrates.
ER -