On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
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Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, "RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1042-1049, July 2008, doi: 10.1093/ietele/e91-c.7.1042.
Abstract: On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1042/_p
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@ARTICLE{e91-c_7_1042,
author={Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination},
year={2008},
volume={E91-C},
number={7},
pages={1042-1049},
abstract={On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
keywords={},
doi={10.1093/ietele/e91-c.7.1042},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
T2 - IEICE TRANSACTIONS on Electronics
SP - 1042
EP - 1049
AU - Makoto KASU
AU - Kenji UEDA
AU - Hiroyuki KAGESHIMA
AU - Yoshiharu YAMAUCHI
PY - 2008
DO - 10.1093/ietele/e91-c.7.1042
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
ER -