A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Pierre LLINARES, Gerard GHIBAUDO, Yannick MOURIER, Nicolas GAMBETTA, Michel LAURENS, Jan A. CHROBOCZEK, "Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 4, pp. 607-611, April 1999, doi: .
Abstract: A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_4_607/_p
Copy
@ARTICLE{e82-c_4_607,
author={Pierre LLINARES, Gerard GHIBAUDO, Yannick MOURIER, Nicolas GAMBETTA, Michel LAURENS, Jan A. CHROBOCZEK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements},
year={1999},
volume={E82-C},
number={4},
pages={607-611},
abstract={A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements
T2 - IEICE TRANSACTIONS on Electronics
SP - 607
EP - 611
AU - Pierre LLINARES
AU - Gerard GHIBAUDO
AU - Yannick MOURIER
AU - Nicolas GAMBETTA
AU - Michel LAURENS
AU - Jan A. CHROBOCZEK
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1999
AB - A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.
ER -