The search functionality is under construction.
The search functionality is under construction.

A 1. 9 GHz Single-Chip RF Front-End GaAs MMIC with Low-Distortion Cascode FET Mixer

Masatoshi NAKAYAMA, Kenichi HORIGUCHI, Kazuya YAMAMOTO, Yutaka YOSHII, Shigeru SUGIYAMA, Noriharu SUEMATSU, Tadashi TAKAGI

  • Full Text Views

    0

  • Cite this

Summary :

We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The IC employs a negative voltage generator for use of single voltage DC power supply. The HPA provides an output power of 21.5 dBm, with an ACPR of 55 dBc and an efficiency of 35%. The LNA has a noise figure of 1.6 dB and a gain of 14 dB with current of 2.3 mA. The newly developed active cascode FET mixer has a high IIP3 of 1 dBm with a high conversion gain of 10 dB and low consumption current of 2.3 mA. The IC is characterized by high performance for RF front-end of PHS handheld terminals. The IC is available in a 7.0 mm6.4 mm1.1 mm plastic package.

Publication
IEICE TRANSACTIONS on Electronics Vol.E82-C No.5 pp.717-724
Publication Date
1999/05/25
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category

Authors

Keyword