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Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes

Toshiyuki SATO, Motoaki IWAYA, Kimio ISOMURA, Tsutomu UKAI, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI

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Summary :

Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.

Publication
IEICE TRANSACTIONS on Electronics Vol.E83-C No.4 pp.573-578
Publication Date
2000/04/25
Publicized
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DOI
Type of Manuscript
Special Section PAPER (Special Issue on Blue Laser Diodes and Related Devices/Technologies)
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