Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.
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Toshiyuki SATO, Motoaki IWAYA, Kimio ISOMURA, Tsutomu UKAI, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI, "Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 573-578, April 2000, doi: .
Abstract: Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_573/_p
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@ARTICLE{e83-c_4_573,
author={Toshiyuki SATO, Motoaki IWAYA, Kimio ISOMURA, Tsutomu UKAI, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes},
year={2000},
volume={E83-C},
number={4},
pages={573-578},
abstract={Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 573
EP - 578
AU - Toshiyuki SATO
AU - Motoaki IWAYA
AU - Kimio ISOMURA
AU - Tsutomu UKAI
AU - Satoshi KAMIYAMA
AU - Hiroshi AMANO
AU - Isamu AKASAKI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Optical transverse-mode properties of the GaN-based semiconductor laser-diode is characterized by effective refractive index method. In order to stabilize a transverse-mode in the conventional ridge-waveguide structure, very precise control of ridge-height is found to be necessary. On the contrary, a novel 2-step grown structure with 2-dimensional index guiding has wide feasibility for device parameter, excellent stability of large confinement factor in transverse-mode, and small aspect ratio of beam divergence, under the condition that AlN molar fraction of 0.08 in AlGaN current blocking layer and stripe width of 1.5 µm are used.
ER -