The search functionality is under construction.

The search functionality is under construction.

Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E83-C No.8 pp.1247-1252

- Publication Date
- 2000/08/25

- Publicized

- Online ISSN

- DOI

- Type of Manuscript
- Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))

- Category
- Process Modeling and Simulation

The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.

Copy

Masami HANE, Takeo IKEZAWA, Akio FURUKAWA, "Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1247-1252, August 2000, doi: .

Abstract: Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1247/_p

Copy

@ARTICLE{e83-c_8_1247,

author={Masami HANE, Takeo IKEZAWA, Akio FURUKAWA, },

journal={IEICE TRANSACTIONS on Electronics},

title={Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage},

year={2000},

volume={E83-C},

number={8},

pages={1247-1252},

abstract={Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.},

keywords={},

doi={},

ISSN={},

month={August},}

Copy

TY - JOUR

TI - Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage

T2 - IEICE TRANSACTIONS on Electronics

SP - 1247

EP - 1252

AU - Masami HANE

AU - Takeo IKEZAWA

AU - Akio FURUKAWA

PY - 2000

DO -

JO - IEICE TRANSACTIONS on Electronics

SN -

VL - E83-C

IS - 8

JA - IEICE TRANSACTIONS on Electronics

Y1 - August 2000

AB - Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. In addition with calculating the diffusion constant, we also identified its migration pathway and barrier energy in the case of Stillinger-Weber potential. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily disappears. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.

ER -