An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.
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Shigeru NAKAJIMA, Ken NAKATA, Kunio TANAKA, Kenji OTOBE, "An InGaP/GaAs Composite Channel FET for High Power Device Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1300-1305, October 2001, doi: .
Abstract: An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1300/_p
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@ARTICLE{e84-c_10_1300,
author={Shigeru NAKAJIMA, Ken NAKATA, Kunio TANAKA, Kenji OTOBE, },
journal={IEICE TRANSACTIONS on Electronics},
title={An InGaP/GaAs Composite Channel FET for High Power Device Applications},
year={2001},
volume={E84-C},
number={10},
pages={1300-1305},
abstract={An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - An InGaP/GaAs Composite Channel FET for High Power Device Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1300
EP - 1305
AU - Shigeru NAKAJIMA
AU - Ken NAKATA
AU - Kunio TANAKA
AU - Kenji OTOBE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.
ER -