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An InGaP/GaAs Composite Channel FET for High Power Device Applications

Shigeru NAKAJIMA, Ken NAKATA, Kunio TANAKA, Kenji OTOBE

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Summary :

An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.

Publication
IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1300-1305
Publication Date
2001/10/01
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category
Hetero-FETs & Their Integrated Circuits

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