In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3 µm gate length yield fT=43 GHz and fmax=78 GHz (s.i. SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20 GHz with e.g. output power levels above 3 Watt cw at 15 GHz for a single 1.6 mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation.
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Helmut LEIER, Andrei VESCAN, Ron DIETRICH, Andreas WIESZT, Hardy Hans SLEDZIK, "RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1442-1447, October 2001, doi: .
Abstract: In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3 µm gate length yield fT=43 GHz and fmax=78 GHz (s.i. SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20 GHz with e.g. output power levels above 3 Watt cw at 15 GHz for a single 1.6 mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1442/_p
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@ARTICLE{e84-c_10_1442,
author={Helmut LEIER, Andrei VESCAN, Ron DIETRICH, Andreas WIESZT, Hardy Hans SLEDZIK, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs},
year={2001},
volume={E84-C},
number={10},
pages={1442-1447},
abstract={In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3 µm gate length yield fT=43 GHz and fmax=78 GHz (s.i. SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20 GHz with e.g. output power levels above 3 Watt cw at 15 GHz for a single 1.6 mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1442
EP - 1447
AU - Helmut LEIER
AU - Andrei VESCAN
AU - Ron DIETRICH
AU - Andreas WIESZT
AU - Hardy Hans SLEDZIK
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3 µm gate length yield fT=43 GHz and fmax=78 GHz (s.i. SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20 GHz with e.g. output power levels above 3 Watt cw at 15 GHz for a single 1.6 mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation.
ER -