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RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs

Helmut LEIER, Andrei VESCAN, Ron DIETRICH, Andreas WIESZT, Hardy Hans SLEDZIK

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Summary :

In this paper we summarize the actual status of the GaN/AlGaN HFET power technology at DaimlerChrysler using high quality structures grown by MOCVD on sapphire or semi-insulating SiC supplied by Epitronics. High mobilites and record extrinsic transconductance and current values were achieved on devices with sapphire and SiC substrate. Small area devices with 0.3 µm gate length yield fT=43 GHz and fmax=78 GHz (s.i. SiC substrate). Load-pull characterisation have been performed on multifinger HFETs up to 20 GHz with e.g. output power levels above 3 Watt cw at 15 GHz for a single 1.6 mm device. Though the achieved results are very promising, the performance of these devices is still hampered by transient effects on different time scales. We will show in this paper that passivation of the devices by SiN could considerably improve the RF power performance as well as reduce long time constant effects present before passivation.

Publication
IEICE TRANSACTIONS on Electronics Vol.E84-C No.10 pp.1442-1447
Publication Date
2001/10/01
Publicized
Online ISSN
DOI
Type of Manuscript
Special Section INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category
Novel Electron Devices

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