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Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.3 pp.725-732

- Publication Date
- 2002/03/01

- Publicized

- Online ISSN

- DOI

- Type of Manuscript
- Special Section INVITED PAPER (Special Issue on Superconductive Electronics)

- Category
- Mixers and Detectors

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Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, "A Distributed Device Model for Hot-Electron Bolometers" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 725-732, March 2002, doi: .

Abstract: Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_725/_p

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@ARTICLE{e85-c_3_725,

author={Harald F. MERKEL, Pourya KHOSROPANAH, Aurèle ADAM, Serguei CHEREDNICHENKO, Erik Ludvig KOLLBERG, },

journal={IEICE TRANSACTIONS on Electronics},

title={A Distributed Device Model for Hot-Electron Bolometers},

year={2002},

volume={E85-C},

number={3},

pages={725-732},

abstract={Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.},

keywords={},

doi={},

ISSN={},

month={March},}

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TY - JOUR

TI - A Distributed Device Model for Hot-Electron Bolometers

T2 - IEICE TRANSACTIONS on Electronics

SP - 725

EP - 732

AU - Harald F. MERKEL

AU - Pourya KHOSROPANAH

AU - Aurèle ADAM

AU - Serguei CHEREDNICHENKO

AU - Erik Ludvig KOLLBERG

PY - 2002

DO -

JO - IEICE TRANSACTIONS on Electronics

SN -

VL - E85-C

IS - 3

JA - IEICE TRANSACTIONS on Electronics

Y1 - March 2002

AB - Previous device models for Hot Electron Bolometers (HEB) apply a lumped element approach to calculate the small signal parameters. In this work, large signal parameters are calculated using a nonlinear one-dimensional heat balance equation including critical current effects. Small signal equivalents are obtained by solving a linearized heat balance for the small signal beat term in the HEB. In this model, the absorbed bias power density is treated as a profile along the HEB bridge and the electrothermal feedback acts differently on different parts of the bridge. This model predicts more realistic conversion gain figures being about 10 dB lower than in previous ones.

ER -