A new test structure to specify accurately the position of gate oxide breakdown is proposed, which simply consists of a conventional polycrystalline Si gate MOS capacitor and Al dots array diagonally lined-up on the capacitor. Optical beam induced current microscope was used to discriminate the breakdown spot. Layout of the discriminated spot among the Al dot array accurately determined the breakdown position. A 5-nm-thick gate oxide breakdown spot determined by this method has been successfully investigated by cross-sectional transmission electron microscopy (XTEM). A series of site-specified XTEM studies reveal local melting of anode Si during the intrinsic dielectric breakdown. This test structure is practically useful for site-specified XTEM studies on process-induced degradation phenomena of thin gate oxides.
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Satoshi IKEDA, Hidetsugu UCHIDA, Norio HIRASHITA, "A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1134-1137, May 2002, doi: .
Abstract: A new test structure to specify accurately the position of gate oxide breakdown is proposed, which simply consists of a conventional polycrystalline Si gate MOS capacitor and Al dots array diagonally lined-up on the capacitor. Optical beam induced current microscope was used to discriminate the breakdown spot. Layout of the discriminated spot among the Al dot array accurately determined the breakdown position. A 5-nm-thick gate oxide breakdown spot determined by this method has been successfully investigated by cross-sectional transmission electron microscopy (XTEM). A series of site-specified XTEM studies reveal local melting of anode Si during the intrinsic dielectric breakdown. This test structure is practically useful for site-specified XTEM studies on process-induced degradation phenomena of thin gate oxides.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1134/_p
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@ARTICLE{e85-c_5_1134,
author={Satoshi IKEDA, Hidetsugu UCHIDA, Norio HIRASHITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors},
year={2002},
volume={E85-C},
number={5},
pages={1134-1137},
abstract={A new test structure to specify accurately the position of gate oxide breakdown is proposed, which simply consists of a conventional polycrystalline Si gate MOS capacitor and Al dots array diagonally lined-up on the capacitor. Optical beam induced current microscope was used to discriminate the breakdown spot. Layout of the discriminated spot among the Al dot array accurately determined the breakdown position. A 5-nm-thick gate oxide breakdown spot determined by this method has been successfully investigated by cross-sectional transmission electron microscopy (XTEM). A series of site-specified XTEM studies reveal local melting of anode Si during the intrinsic dielectric breakdown. This test structure is practically useful for site-specified XTEM studies on process-induced degradation phenomena of thin gate oxides.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1134
EP - 1137
AU - Satoshi IKEDA
AU - Hidetsugu UCHIDA
AU - Norio HIRASHITA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - A new test structure to specify accurately the position of gate oxide breakdown is proposed, which simply consists of a conventional polycrystalline Si gate MOS capacitor and Al dots array diagonally lined-up on the capacitor. Optical beam induced current microscope was used to discriminate the breakdown spot. Layout of the discriminated spot among the Al dot array accurately determined the breakdown position. A 5-nm-thick gate oxide breakdown spot determined by this method has been successfully investigated by cross-sectional transmission electron microscopy (XTEM). A series of site-specified XTEM studies reveal local melting of anode Si during the intrinsic dielectric breakdown. This test structure is practically useful for site-specified XTEM studies on process-induced degradation phenomena of thin gate oxides.
ER -