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We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with *t*_{OX} = 1 nm and *t*_{Si} = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E85-C No.5 pp.1191-1199

- Publication Date
- 2002/05/01

- Publicized

- Online ISSN

- DOI

- Type of Manuscript
- PAPER

- Category
- Semiconductor Materials and Devices

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Masafumi TSUTSUI, Toshiaki NAGAI, Masahiro ASADA, "Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1191-1199, May 2002, doi: .

Abstract: We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with *t*_{OX} = 1 nm and *t*_{Si} = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1191/_p

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@ARTICLE{e85-c_5_1191,

author={Masafumi TSUTSUI, Toshiaki NAGAI, Masahiro ASADA, },

journal={IEICE TRANSACTIONS on Electronics},

title={Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET},

year={2002},

volume={E85-C},

number={5},

pages={1191-1199},

abstract={We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with *t*_{OX} = 1 nm and *t*_{Si} = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.},

keywords={},

doi={},

ISSN={},

month={May},}

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TY - JOUR

TI - Analysis and Fabrication of P-Type Vertical PtSi Schottky Source/Drain MOSFET

T2 - IEICE TRANSACTIONS on Electronics

SP - 1191

EP - 1199

AU - Masafumi TSUTSUI

AU - Toshiaki NAGAI

AU - Masahiro ASADA

PY - 2002

DO -

JO - IEICE TRANSACTIONS on Electronics

SN -

VL - E85-C

IS - 5

JA - IEICE TRANSACTIONS on Electronics

Y1 - May 2002

AB - We report on the analysis and fabrication of vertical PtSi Schottky source/drain metal oxide semiconductor field effect transistors (MOSFETs), which are suitable for combination with quantum effect devices such as resonant tunneling diodes. Analysis was carried out by one-dimensional approximation of the device structure, WKB approximation of the tunneling probability in Schottky barrier tunneling and self-consistent calculation. Theoretical calculation showed good drivability (750 µA/µm) of this device with *t*_{OX} = 1 nm and *t*_{Si} = 5 nm. As a preliminary experiment, devices with a Si channel thickness of 8 nm, 20 nm or 30 nm and a vertical channel length of 55 nm were fabricated. Although the drain current at the "on" state was small due to the thick gate oxide of 8 nm, analysis and measurement showed reasonable agreement with respect to the drivability. Based on the results of theoretical analysis, the device drivability can be much improved by reducing the gate oxide thickness.

ER -