A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
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Mamoru UGAJIN, Kenji SUZUKI, Tsuneo TSUKAHARA, "A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 8, pp. 1588-1595, August 2002, doi: .
Abstract: A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_8_1588/_p
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@ARTICLE{e85-c_8_1588,
author={Mamoru UGAJIN, Kenji SUZUKI, Tsuneo TSUKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI},
year={2002},
volume={E85-C},
number={8},
pages={1588-1595},
abstract={A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - A 0.6-V Supply, Voltage-Reference Circuit Based on Threshold-Voltage-Summation Architecture in Fully-Depleted CMOS/SOI
T2 - IEICE TRANSACTIONS on Electronics
SP - 1588
EP - 1595
AU - Mamoru UGAJIN
AU - Kenji SUZUKI
AU - Tsuneo TSUKAHARA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2002
AB - A low-voltage silicon-on-insulator (SOI) voltage-reference circuit has been developed. It is based on threshold-voltage-summation architecture and the output is not affected by the input offset of the feedback amplifier. Thus, the output dispersion is considerably reduced. An undoped MOSFET is used as a depletion-mode transistor because of its small threshold voltage. The temperature dependence of normal and undoped MOSFETs in fully depleted CMOS/SOI technology is studied for designing a temperature-insensitive voltage-reference circuit. A prototype circuit, fabricated on a fully depleted CMOS/SIMOX process, has a measured reference voltage of 530
ER -