In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.
Mo ZHOU
University of Science and Technology of China,Chinese Academy of Sciences
Yi SHAN
Chinese Academy of Sciences
Yemin DONG
Chinese Academy of Sciences
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Mo ZHOU, Yi SHAN, Yemin DONG, "An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 332-334, June 2020, doi: 10.1587/transele.2019ECS6017.
Abstract: In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019ECS6017/_p
Copy
@ARTICLE{e103-c_6_332,
author={Mo ZHOU, Yi SHAN, Yemin DONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process},
year={2020},
volume={E103-C},
number={6},
pages={332-334},
abstract={In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.},
keywords={},
doi={10.1587/transele.2019ECS6017},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 332
EP - 334
AU - Mo ZHOU
AU - Yi SHAN
AU - Yemin DONG
PY - 2020
DO - 10.1587/transele.2019ECS6017
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.
ER -