The search functionality is under construction.
The search functionality is under construction.

An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process

Mo ZHOU, Yi SHAN, Yemin DONG

  • Full Text Views

    0

  • Cite this

Summary :

In this paper, an enhanced well-changed GGNMOS (EW-GGNMOS) is proposed and demonstrated. The new device has the same topology as the conventional 3.3V GGNMOS, except that its well has been changed to the 1.2V p-well. Attributed to higher doping concentration, resulting in a much lower trigger voltage and desirable turn-on uniformity compared to conventional 3.3V GGNMOS. Therefore, we can use EW-GGNMOS as a 3.3V ESD protection device without any additional process.

Publication
IEICE TRANSACTIONS on Electronics Vol.E103-C No.6 pp.332-334
Publication Date
2020/06/01
Publicized
2020/01/07
Online ISSN
1745-1353
DOI
10.1587/transele.2019ECS6017
Type of Manuscript
BRIEF PAPER
Category
Electromagnetic Theory

Authors

Mo ZHOU
  University of Science and Technology of China,Chinese Academy of Sciences
Yi SHAN
  Chinese Academy of Sciences
Yemin DONG
  Chinese Academy of Sciences

Keyword