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High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications

Tsuyoshi SUGIURA, Satoshi FURUTA, Tadamasa MURAKAMI, Koki TANJI, Norihisa OTANI, Toshihiko YOSHIMASU

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Summary :

This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.

Publication
IEICE TRANSACTIONS on Electronics Vol.E102-C No.10 pp.699-706
Publication Date
2019/10/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.2019MMP0007
Type of Manuscript
Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category

Authors

Tsuyoshi SUGIURA
  Samsung R&D Institute Japan
Satoshi FURUTA
  Samsung R&D Institute Japan
Tadamasa MURAKAMI
  Samsung R&D Institute Japan
Koki TANJI
  Samsung R&D Institute Japan
Norihisa OTANI
  Samsung R&D Institute Japan
Toshihiko YOSHIMASU
  Waseda University

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