This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.
Tsuyoshi SUGIURA
Samsung R&D Institute Japan
Satoshi FURUTA
Samsung R&D Institute Japan
Tadamasa MURAKAMI
Samsung R&D Institute Japan
Koki TANJI
Samsung R&D Institute Japan
Norihisa OTANI
Samsung R&D Institute Japan
Toshihiko YOSHIMASU
Waseda University
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Tsuyoshi SUGIURA, Satoshi FURUTA, Tadamasa MURAKAMI, Koki TANJI, Norihisa OTANI, Toshihiko YOSHIMASU, "High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 10, pp. 699-706, October 2019, doi: 10.1587/transele.2019MMP0007.
Abstract: This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019MMP0007/_p
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@ARTICLE{e102-c_10_699,
author={Tsuyoshi SUGIURA, Satoshi FURUTA, Tadamasa MURAKAMI, Koki TANJI, Norihisa OTANI, Toshihiko YOSHIMASU, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications},
year={2019},
volume={E102-C},
number={10},
pages={699-706},
abstract={This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.},
keywords={},
doi={10.1587/transele.2019MMP0007},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 699
EP - 706
AU - Tsuyoshi SUGIURA
AU - Satoshi FURUTA
AU - Tadamasa MURAKAMI
AU - Koki TANJI
AU - Norihisa OTANI
AU - Toshihiko YOSHIMASU
PY - 2019
DO - 10.1587/transele.2019MMP0007
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2019
AB - This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm2. The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.
ER -