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In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm^{2} by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.

- Publication
- IEICE TRANSACTIONS on Electronics Vol.E104-C No.1 pp.37-39

- Publication Date
- 2021/01/01

- Publicized
- 2020/07/09

- Online ISSN
- 1745-1353

- DOI
- 10.1587/transele.2020ECS6003

- Type of Manuscript
- BRIEF PAPER

- Category
- Microwaves, Millimeter-Waves

Kiwon LEE

Wonkwang University

Yongsik JEONG

Korea Advanced Institute of Science and Technology

The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.

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Kiwon LEE, Yongsik JEONG, "A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 1, pp. 37-39, January 2021, doi: 10.1587/transele.2020ECS6003.

Abstract: In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm^{2} by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.

URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECS6003/_p

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@ARTICLE{e104-c_1_37,

author={Kiwon LEE, Yongsik JEONG, },

journal={IEICE TRANSACTIONS on Electronics},

title={A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor},

year={2021},

volume={E104-C},

number={1},

pages={37-39},

abstract={In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm^{2} by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.},

keywords={},

doi={10.1587/transele.2020ECS6003},

ISSN={1745-1353},

month={January},}

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TY - JOUR

TI - A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor

T2 - IEICE TRANSACTIONS on Electronics

SP - 37

EP - 39

AU - Kiwon LEE

AU - Yongsik JEONG

PY - 2021

DO - 10.1587/transele.2020ECS6003

JO - IEICE TRANSACTIONS on Electronics

SN - 1745-1353

VL - E104-C

IS - 1

JA - IEICE TRANSACTIONS on Electronics

Y1 - January 2021

AB - In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm^{2} by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.

ER -