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Low-Temperature Atomic Layer Deposition of AlN Using Trimethyl Aluminum and Plasma Excited Ar Diluted Ammonia

Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE

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Summary :

The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH3 and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.

Publication
IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.596-603
Publication Date
2022/10/01
Publicized
2022/06/27
Online ISSN
1745-1353
DOI
10.1587/transele.2021FUP0001
Type of Manuscript
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category

Authors

Kentaro SAITO
  Yamagata University
Kazuki YOSHIDA
  Yamagata University
Masanori MIURA
  Yamagata University
Kensaku KANOMATA
  Yamagata University
Bashir AHMMAD
  Yamagata University
Shigeru KUBOTA
  Yamagata University
Fumihiko HIROSE
  Yamagata University

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