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Low-Temperature Deposition of Yttrium Oxide on Flexible PET Films Using Time-Separated Yttrium Precursor and Oxidizer Injections

Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE

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Summary :

Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.

Publication
IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.604-609
Publication Date
2022/10/01
Publicized
2022/06/27
Online ISSN
1745-1353
DOI
10.1587/transele.2021FUP0002
Type of Manuscript
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category

Authors

Kentaro SAITO
  Yamagata University
Kazuki YOSHIDA
  Yamagata University
Masanori MIURA
  Yamagata University
Kensaku KANOMATA
  Yamagata University
Bashir AHMMAD
  Yamagata University
Shigeru KUBOTA
  Yamagata University
Fumihiko HIROSE
  Yamagata University

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