Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.
Kentaro SAITO
Yamagata University
Kazuki YOSHIDA
Yamagata University
Masanori MIURA
Yamagata University
Kensaku KANOMATA
Yamagata University
Bashir AHMMAD
Yamagata University
Shigeru KUBOTA
Yamagata University
Fumihiko HIROSE
Yamagata University
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Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, "Low-Temperature Deposition of Yttrium Oxide on Flexible PET Films Using Time-Separated Yttrium Precursor and Oxidizer Injections" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 604-609, October 2022, doi: 10.1587/transele.2021FUP0002.
Abstract: Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUP0002/_p
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@ARTICLE{e105-c_10_604,
author={Kentaro SAITO, Kazuki YOSHIDA, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Temperature Deposition of Yttrium Oxide on Flexible PET Films Using Time-Separated Yttrium Precursor and Oxidizer Injections},
year={2022},
volume={E105-C},
number={10},
pages={604-609},
abstract={Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.},
keywords={},
doi={10.1587/transele.2021FUP0002},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Low-Temperature Deposition of Yttrium Oxide on Flexible PET Films Using Time-Separated Yttrium Precursor and Oxidizer Injections
T2 - IEICE TRANSACTIONS on Electronics
SP - 604
EP - 609
AU - Kentaro SAITO
AU - Kazuki YOSHIDA
AU - Masanori MIURA
AU - Kensaku KANOMATA
AU - Bashir AHMMAD
AU - Shigeru KUBOTA
AU - Fumihiko HIROSE
PY - 2022
DO - 10.1587/transele.2021FUP0002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - Low-temperature deposition of Y2O3 at 80°C is studied using an yttrium precursor of tris(butylcyclopentadienyl)yttrium (Y(BuCp)3) and plasma exited humidified argon oxidizer. The deposition is demonstrated using an atomic-layer-deposition sequence; the Y(BuCp)3 and the oxidizing gases are time separately introduced to the reaction chamber and these injections are repeated. To determine the gas introduction conditions, surface reactions of Y(BuCp)3 adsorption and its oxidization are observed by an in-situ IR absorption spectroscopy. The deposited film is confirmed as fully oxidized Y2O3 by X-ray photoelectron spectroscopy. The present deposition is applicable for the deposition of Y2O3 film on flexible polyethylene terephthalate films.
ER -