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An SOI-Based Lock-in Pixel with a Shallow Buried Channel for Reducing Parasitic Light Sensitivity and Improving Modulation Contrast

Tatsuya KOBAYASHI, Keita YASUTOMI, Naoki TAKADA, Shoji KAWAHITO

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Summary :

This paper presents a high-NIR sensitivity SOI-gate lock-in pixel with improved modulation contrast. The proposed pixel has a shallow buried channel and intermediate gates to create both a high lateral electric field and a potential barrier to parasitic light sensitivity. Device simulation results showed that parasitic light sensitivity reduced from 13.7% to 0.13% compared to the previous structure.

Publication
IEICE TRANSACTIONS on Electronics Vol.E106-C No.10 pp.538-545
Publication Date
2023/10/01
Publicized
2023/04/10
Online ISSN
1745-1353
DOI
10.1587/transele.2022CTP0003
Type of Manuscript
Special Section PAPER (Special Section on Analog Circuits and Their Application Technologies)
Category

Authors

Tatsuya KOBAYASHI
  Shizuoka University
Keita YASUTOMI
  Shizuoka University
Naoki TAKADA
  Shizuoka University
Shoji KAWAHITO
  Shizuoka University

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