Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip-chip bonding.
Kaito TOMARI
Tokyo Institute of Technology,Nikon Corporation
Jun YONEDA
Tokyo Institute of Technology
Tetsuo KODERA
Tokyo Institute of Technology
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Kaito TOMARI, Jun YONEDA, Tetsuo KODERA, "Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 10, pp. 588-591, October 2023, doi: 10.1587/transele.2022FUS0001.
Abstract: Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip-chip bonding.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022FUS0001/_p
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@ARTICLE{e106-c_10_588,
author={Kaito TOMARI, Jun YONEDA, Tetsuo KODERA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk},
year={2023},
volume={E106-C},
number={10},
pages={588-591},
abstract={Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip-chip bonding.},
keywords={},
doi={10.1587/transele.2022FUS0001},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Contact Pad Design Considerations for Semiconductor Qubit Devices for Reducing On-Chip Microwave Crosstalk
T2 - IEICE TRANSACTIONS on Electronics
SP - 588
EP - 591
AU - Kaito TOMARI
AU - Jun YONEDA
AU - Tetsuo KODERA
PY - 2023
DO - 10.1587/transele.2022FUS0001
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2023
AB - Reducing on-chip microwave crosstalk is crucial for semiconductor spin qubit integration. Toward crosstalk reduction and qubit integration, we investigate on-chip microwave crosstalk for gate electrode pad designs with (i) etched trenches between contact pads or (ii) contact pads with reduced sizes. We conclude that the design with feature (ii) is advantageous for high-density integration of semiconductor qubits with small crosstalk (below -25 dB at 6 GHz), favoring the introduction of flip-chip bonding.
ER -