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We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.
Doo-Hee CHO
Sang-Hee Ko PARK
Shinhyuk YANG
Chunwon BYUN
Min Ki RYU
Jeong-Ik LEE
Chi-Sun HWANG
Sung Min YOON
Hye Yong CHU
Kyoung Ik CHO
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Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO, "Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 11, pp. 1340-1346, November 2009, doi: 10.1587/transele.E92.C.1340.
Abstract: We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1340/_p
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@ARTICLE{e92-c_11_1340,
author={Doo-Hee CHO, Sang-Hee Ko PARK, Shinhyuk YANG, Chunwon BYUN, Min Ki RYU, Jeong-Ik LEE, Chi-Sun HWANG, Sung Min YOON, Hye Yong CHU, Kyoung Ik CHO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED},
year={2009},
volume={E92-C},
number={11},
pages={1340-1346},
abstract={We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.},
keywords={},
doi={10.1587/transele.E92.C.1340},
ISSN={1745-1353},
month={November},}
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TY - JOUR
TI - Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
T2 - IEICE TRANSACTIONS on Electronics
SP - 1340
EP - 1346
AU - Doo-Hee CHO
AU - Sang-Hee Ko PARK
AU - Shinhyuk YANG
AU - Chunwon BYUN
AU - Min Ki RYU
AU - Jeong-Ik LEE
AU - Chi-Sun HWANG
AU - Sung Min YOON
AU - Hye Yong CHU
AU - Kyoung Ik CHO
PY - 2009
DO - 10.1587/transele.E92.C.1340
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2009
AB - We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array.
ER -