The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
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Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, "Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 635-638, May 2009, doi: 10.1587/transele.E92.C.635.
Abstract: The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.635/_p
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@ARTICLE{e92-c_5_635,
author={Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio},
year={2009},
volume={E92-C},
number={5},
pages={635-638},
abstract={The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.},
keywords={},
doi={10.1587/transele.E92.C.635},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio
T2 - IEICE TRANSACTIONS on Electronics
SP - 635
EP - 638
AU - Dong-Shong LIANG
AU - Kwang-Jow GAN
AU - Cheng-Chi TAI
AU - Cher-Shiung TSAI
PY - 2009
DO - 10.1587/transele.E92.C.635
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.
ER -