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Standard BiCMOS Implementation of a Two-Peak Negative Differential Resistance Circuit with High and Adjustable Peak-to-Valley Current Ratio

Dong-Shong LIANG, Kwang-Jow GAN, Cheng-Chi TAI, Cher-Shiung TSAI

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Summary :

The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneling diode, MOS-HBT-NDR has two major advantages in our circuit design. One is that the fabrication of this MOS-HBT-NDR-based application can be fully implemented by the standard BiCMOS process. Another is that the peak current can be effectively adjusted by the controlled voltage. The peak-to-valley current ratio is about 4136 and 9.4 at the first and second peak respectively. It is very useful for circuit designers to consider the NDR-based applications.

Publication
IEICE TRANSACTIONS on Electronics Vol.E92-C No.5 pp.635-638
Publication Date
2009/05/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E92.C.635
Type of Manuscript
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
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