The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
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Iltcho ANGELOV, Mattias THORSELL, Kristoffer ANDERSSON, Akira INOUE, Koji YAMANAKA, Hifumi NOTO, "On the Large Signal Evaluation and Modeling of GaN FET" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1225-1233, August 2010, doi: 10.1587/transele.E93.C.1225.
Abstract: The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1225/_p
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@ARTICLE{e93-c_8_1225,
author={Iltcho ANGELOV, Mattias THORSELL, Kristoffer ANDERSSON, Akira INOUE, Koji YAMANAKA, Hifumi NOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={On the Large Signal Evaluation and Modeling of GaN FET},
year={2010},
volume={E93-C},
number={8},
pages={1225-1233},
abstract={The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.},
keywords={},
doi={10.1587/transele.E93.C.1225},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - On the Large Signal Evaluation and Modeling of GaN FET
T2 - IEICE TRANSACTIONS on Electronics
SP - 1225
EP - 1233
AU - Iltcho ANGELOV
AU - Mattias THORSELL
AU - Kristoffer ANDERSSON
AU - Akira INOUE
AU - Koji YAMANAKA
AU - Hifumi NOTO
PY - 2010
DO - 10.1587/transele.E93.C.1225
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
ER -