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On the Large Signal Evaluation and Modeling of GaN FET

Iltcho ANGELOV, Mattias THORSELL, Kristoffer ANDERSSON, Akira INOUE, Koji YAMANAKA, Hifumi NOTO

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Summary :

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

Publication
IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1225-1233
Publication Date
2010/08/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E93.C.1225
Type of Manuscript
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category
GaN-based Devices

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