We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
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Amine EL MOUTAOUAKIL, Tsuneyoshi KOMORI, Kouhei HORIIKE, Tetsuya SUEMITSU, Taiichi OTSUJI, "Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1286-1289, August 2010, doi: 10.1587/transele.E93.C.1286.
Abstract: We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1286/_p
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@ARTICLE{e93-c_8_1286,
author={Amine EL MOUTAOUAKIL, Tsuneyoshi KOMORI, Kouhei HORIIKE, Tetsuya SUEMITSU, Taiichi OTSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems},
year={2010},
volume={E93-C},
number={8},
pages={1286-1289},
abstract={We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.},
keywords={},
doi={10.1587/transele.E93.C.1286},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1286
EP - 1289
AU - Amine EL MOUTAOUAKIL
AU - Tsuneyoshi KOMORI
AU - Kouhei HORIIKE
AU - Tetsuya SUEMITSU
AU - Taiichi OTSUJI
PY - 2010
DO - 10.1587/transele.E93.C.1286
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.
ER -