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Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems

Amine EL MOUTAOUAKIL, Tsuneyoshi KOMORI, Kouhei HORIIKE, Tetsuya SUEMITSU, Taiichi OTSUJI

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Summary :

We report on the first terahertz emission from a novel dual grating gate plasmon-resonant emitter fabricated with InAlAs/InGaAs/InP material systems. The introduction of InP based heterostructure material systems, instead of the GaAs based ones, in order to improve the quality factor, has successfully enhanced the THz emission intensity and realized the spectral narrowing at room temperature.

Publication
IEICE TRANSACTIONS on Electronics Vol.E93-C No.8 pp.1286-1289
Publication Date
2010/08/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E93.C.1286
Type of Manuscript
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category
THz Electronics

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