A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
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Myounggon KANG, Ki-Tae PARK, Youngsun SONG, Sungsoo LEE, Yunheub SONG, Young-Ho LIM, "A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 2, pp. 182-186, February 2010, doi: 10.1587/transele.E93.C.182.
Abstract: A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.182/_p
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@ARTICLE{e93-c_2_182,
author={Myounggon KANG, Ki-Tae PARK, Youngsun SONG, Sungsoo LEE, Yunheub SONG, Young-Ho LIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory},
year={2010},
volume={E93-C},
number={2},
pages={182-186},
abstract={A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.},
keywords={},
doi={10.1587/transele.E93.C.182},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 182
EP - 186
AU - Myounggon KANG
AU - Ki-Tae PARK
AU - Youngsun SONG
AU - Sungsoo LEE
AU - Yunheub SONG
AU - Young-Ho LIM
PY - 2010
DO - 10.1587/transele.E93.C.182
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2010
AB - A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.
ER -