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A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

Myounggon KANG, Ki-Tae PARK, Youngsun SONG, Sungsoo LEE, Yunheub SONG, Young-Ho LIM

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Summary :

A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8 V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

Publication
IEICE TRANSACTIONS on Electronics Vol.E93-C No.2 pp.182-186
Publication Date
2010/02/01
Publicized
Online ISSN
1745-1353
DOI
10.1587/transele.E93.C.182
Type of Manuscript
PAPER
Category
Electronic Circuits

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