Design of the 30 nm FinFETs and Double Gate MOSFETs with the halo structure for suppressing the threshold voltage roll-off and improving the subthreshold swing at the same time is proposed for the first time. The performances of nano scale FinFETs and Double Gate MOSFETs with the halo structure are analyzed using a two-dimensional device simulator. The device characteristics, focusing especially on the threshold voltage and subthreshold slope, are investigated for the different gate length, body thickness, and halo impurity concentration. From the viewpoint of body potential control, it is made clear on how to design the halo structure to suppress the short channel effects and improve the subthreshold-slope. It is shown that by introducing the halo structure to FinFETs and Double Gate MOSFETs, nano-scale FinFETs and Double Gate MOSFETs achieve an improved S-factor and suppressed threshold voltage Vth roll-off simultaneously.
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Tetsuo ENDOH, Koji SAKUI, Yukio YASUDA, "Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 534-539, May 2010, doi: 10.1587/transele.E93.C.534.
Abstract: Design of the 30 nm FinFETs and Double Gate MOSFETs with the halo structure for suppressing the threshold voltage roll-off and improving the subthreshold swing at the same time is proposed for the first time. The performances of nano scale FinFETs and Double Gate MOSFETs with the halo structure are analyzed using a two-dimensional device simulator. The device characteristics, focusing especially on the threshold voltage and subthreshold slope, are investigated for the different gate length, body thickness, and halo impurity concentration. From the viewpoint of body potential control, it is made clear on how to design the halo structure to suppress the short channel effects and improve the subthreshold-slope. It is shown that by introducing the halo structure to FinFETs and Double Gate MOSFETs, nano-scale FinFETs and Double Gate MOSFETs achieve an improved S-factor and suppressed threshold voltage Vth roll-off simultaneously.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.534/_p
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@ARTICLE{e93-c_5_534,
author={Tetsuo ENDOH, Koji SAKUI, Yukio YASUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure},
year={2010},
volume={E93-C},
number={5},
pages={534-539},
abstract={Design of the 30 nm FinFETs and Double Gate MOSFETs with the halo structure for suppressing the threshold voltage roll-off and improving the subthreshold swing at the same time is proposed for the first time. The performances of nano scale FinFETs and Double Gate MOSFETs with the halo structure are analyzed using a two-dimensional device simulator. The device characteristics, focusing especially on the threshold voltage and subthreshold slope, are investigated for the different gate length, body thickness, and halo impurity concentration. From the viewpoint of body potential control, it is made clear on how to design the halo structure to suppress the short channel effects and improve the subthreshold-slope. It is shown that by introducing the halo structure to FinFETs and Double Gate MOSFETs, nano-scale FinFETs and Double Gate MOSFETs achieve an improved S-factor and suppressed threshold voltage Vth roll-off simultaneously.},
keywords={},
doi={10.1587/transele.E93.C.534},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Design of 30 nm FinFETs and Double Gate MOSFETs with Halo Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 534
EP - 539
AU - Tetsuo ENDOH
AU - Koji SAKUI
AU - Yukio YASUDA
PY - 2010
DO - 10.1587/transele.E93.C.534
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - Design of the 30 nm FinFETs and Double Gate MOSFETs with the halo structure for suppressing the threshold voltage roll-off and improving the subthreshold swing at the same time is proposed for the first time. The performances of nano scale FinFETs and Double Gate MOSFETs with the halo structure are analyzed using a two-dimensional device simulator. The device characteristics, focusing especially on the threshold voltage and subthreshold slope, are investigated for the different gate length, body thickness, and halo impurity concentration. From the viewpoint of body potential control, it is made clear on how to design the halo structure to suppress the short channel effects and improve the subthreshold-slope. It is shown that by introducing the halo structure to FinFETs and Double Gate MOSFETs, nano-scale FinFETs and Double Gate MOSFETs achieve an improved S-factor and suppressed threshold voltage Vth roll-off simultaneously.
ER -