We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.
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Tong WANG, Yoshiki SHIMIZU, Naoyuki ISHIDA, Hirobumi USHIJIMA, "A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 2, pp. 146-150, February 2011, doi: 10.1587/transele.E94.C.146.
Abstract: We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.146/_p
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@ARTICLE{e94-c_2_146,
author={Tong WANG, Yoshiki SHIMIZU, Naoyuki ISHIDA, Hirobumi USHIJIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography},
year={2011},
volume={E94-C},
number={2},
pages={146-150},
abstract={We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.},
keywords={},
doi={10.1587/transele.E94.C.146},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - A New Method of 'Solid Inking' and Its Application to Direct Patterning of InAs Nanowire Using Dip-Pen Nanolithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 146
EP - 150
AU - Tong WANG
AU - Yoshiki SHIMIZU
AU - Naoyuki ISHIDA
AU - Hirobumi USHIJIMA
PY - 2011
DO - 10.1587/transele.E94.C.146
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2011
AB - We report a new approach to creating a 'solid ink' and direct patterning of InAs nanowires on a Si substrate using dip-pen nanolithography (DPN). The normal method to prepare an 'ink' is a solution-based process using sonication to liquidize nanoparticles, which we call 'liquid ink' in this paper. As ink-solution-based DPN patterning has been prevalent in most studies, herein we propose a new method, 'solid inking', by which the inking process is solution-free. In our work, InAs nanowires were transferred to an AFM tip by directly scanning the tip over an InAs nanowire wafer at humidity over 80%. By this method, the preparation of ink and the 'inking' process is combined into one step, and a large amount of nanowires can be collected onto the tip to ensure the formation of a continuous ink flow for the direct patterning.
ER -