Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.
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Ryuichi FUJIMOTO, Kyoya TAKANO, Mizuki MOTOYOSHI, Uroschanit YODPRASIT, Minoru FUJISHIMA, "Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 4, pp. 589-597, April 2011, doi: 10.1587/transele.E94.C.589.
Abstract: Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.589/_p
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@ARTICLE{e94-c_4_589,
author={Ryuichi FUJIMOTO, Kyoya TAKANO, Mizuki MOTOYOSHI, Uroschanit YODPRASIT, Minoru FUJISHIMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz},
year={2011},
volume={E94-C},
number={4},
pages={589-597},
abstract={Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.},
keywords={},
doi={10.1587/transele.E94.C.589},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz
T2 - IEICE TRANSACTIONS on Electronics
SP - 589
EP - 597
AU - Ryuichi FUJIMOTO
AU - Kyoya TAKANO
AU - Mizuki MOTOYOSHI
AU - Uroschanit YODPRASIT
AU - Minoru FUJISHIMA
PY - 2011
DO - 10.1587/transele.E94.C.589
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2011
AB - Device modeling techniques for high-frequency circuits operating at over 100 GHz are presented. We have proposed the bond-based design as an accurate high-frequency circuit design method. Because layout parasitic extractions (LPE) are not required in the bond-based design, it can be applied high-frequency circuit design at over 100 GHz. However, customized device models are indispensable for the bond-based design. In this paper, device modeling techniques for high-frequency circuit design using the bond-based design are proposed. The customized device model for MOSFETs, transmission lines and pads are introduced. By using customized device models, the difference between the simulated and measured gains of an amplifier is improved to less than 0.6 dB at 120 GHz.
ER -