A wide range CMOS voltage detector with low current consumption consisting of CMOS inverters operating in both weak inversion and saturation region is proposed. A terminal of power supply for CMOS inverter can be expanded to a signal input terminal. A voltage-detection point and hysteresis characteristics of the proposed circuit can be designed by geometrical factor in MOSFET and an external bias voltage. The core circuit elements are fabricated in standard 0.18 µm CMOS process and measured to confirm the operation. The detectable voltage is from 0.3 V to 1.8 V. The current consumption of voltage detection, standby current, is changed from 65 pA for Vin = 0.3 V to 5.5 µA for Vin = 1.8 V. The thermal characteristics from 250 K to 400 K are also considered. The measured temperature coefficient of the proposed voltage-detector core operating in weak inversion region is 4 ppm/K and that in saturation region is 10 ppm/K. The proposed voltage detector can be implemented with tiny chip area and is expected to an on-chip voltage detector of power supply for mobile application systems.
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Kawori TAKAKUBO, Hajime TAKAKUBO, "Wide Range CMOS Voltage Detector with Low Current Consumption and Low Temperature Variation" in IEICE TRANSACTIONS on Fundamentals,
vol. E92-A, no. 2, pp. 443-450, February 2009, doi: 10.1587/transfun.E92.A.443.
Abstract: A wide range CMOS voltage detector with low current consumption consisting of CMOS inverters operating in both weak inversion and saturation region is proposed. A terminal of power supply for CMOS inverter can be expanded to a signal input terminal. A voltage-detection point and hysteresis characteristics of the proposed circuit can be designed by geometrical factor in MOSFET and an external bias voltage. The core circuit elements are fabricated in standard 0.18 µm CMOS process and measured to confirm the operation. The detectable voltage is from 0.3 V to 1.8 V. The current consumption of voltage detection, standby current, is changed from 65 pA for Vin = 0.3 V to 5.5 µA for Vin = 1.8 V. The thermal characteristics from 250 K to 400 K are also considered. The measured temperature coefficient of the proposed voltage-detector core operating in weak inversion region is 4 ppm/K and that in saturation region is 10 ppm/K. The proposed voltage detector can be implemented with tiny chip area and is expected to an on-chip voltage detector of power supply for mobile application systems.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.E92.A.443/_p
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@ARTICLE{e92-a_2_443,
author={Kawori TAKAKUBO, Hajime TAKAKUBO, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Wide Range CMOS Voltage Detector with Low Current Consumption and Low Temperature Variation},
year={2009},
volume={E92-A},
number={2},
pages={443-450},
abstract={A wide range CMOS voltage detector with low current consumption consisting of CMOS inverters operating in both weak inversion and saturation region is proposed. A terminal of power supply for CMOS inverter can be expanded to a signal input terminal. A voltage-detection point and hysteresis characteristics of the proposed circuit can be designed by geometrical factor in MOSFET and an external bias voltage. The core circuit elements are fabricated in standard 0.18 µm CMOS process and measured to confirm the operation. The detectable voltage is from 0.3 V to 1.8 V. The current consumption of voltage detection, standby current, is changed from 65 pA for Vin = 0.3 V to 5.5 µA for Vin = 1.8 V. The thermal characteristics from 250 K to 400 K are also considered. The measured temperature coefficient of the proposed voltage-detector core operating in weak inversion region is 4 ppm/K and that in saturation region is 10 ppm/K. The proposed voltage detector can be implemented with tiny chip area and is expected to an on-chip voltage detector of power supply for mobile application systems.},
keywords={},
doi={10.1587/transfun.E92.A.443},
ISSN={1745-1337},
month={February},}
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TY - JOUR
TI - Wide Range CMOS Voltage Detector with Low Current Consumption and Low Temperature Variation
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 443
EP - 450
AU - Kawori TAKAKUBO
AU - Hajime TAKAKUBO
PY - 2009
DO - 10.1587/transfun.E92.A.443
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E92-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2009
AB - A wide range CMOS voltage detector with low current consumption consisting of CMOS inverters operating in both weak inversion and saturation region is proposed. A terminal of power supply for CMOS inverter can be expanded to a signal input terminal. A voltage-detection point and hysteresis characteristics of the proposed circuit can be designed by geometrical factor in MOSFET and an external bias voltage. The core circuit elements are fabricated in standard 0.18 µm CMOS process and measured to confirm the operation. The detectable voltage is from 0.3 V to 1.8 V. The current consumption of voltage detection, standby current, is changed from 65 pA for Vin = 0.3 V to 5.5 µA for Vin = 1.8 V. The thermal characteristics from 250 K to 400 K are also considered. The measured temperature coefficient of the proposed voltage-detector core operating in weak inversion region is 4 ppm/K and that in saturation region is 10 ppm/K. The proposed voltage detector can be implemented with tiny chip area and is expected to an on-chip voltage detector of power supply for mobile application systems.
ER -