A simple method to obtain the bulk generation time and surface generation velocity in the completely depleted state is presented. The method is based on measuring both the gate current and high frequency capacitance at the time, t=0, soon after the gate voltage is switched from a depletion to an inversion state on an MOS capacitor. The gate current Igo and high frequency capacitance Chfo at t=0 is measured for various step gate voltages, and the plots of Igo/(1Chfo/Cox) against (Cf/Chfo1) is obtained as the straight line, from which the two generation constants are calculated. In respect of some advantages compared to already existing methods, it is pointed out that our method does not require to know the impurity density and depletion layer width of semiconductor for the determination of the two generation constants.

The metal-insulator (tunnel)-n/p+ semiconductor-switch (MISS) device is known to display current-controlled negative resistance in the current density-voltage (J-V) characteristics and can be applied as shift registers, optical switching element, etc. However the effect of optical illumination on the J-V characteristics has not been understood theoretically. In this paper the illumination effects in the three parts of the device, i.e., the p+n junction, the insulator-semiconductor junction and the depletion region of the n layer, are calculated, and the J-V characteristics under illumination are obtained. The fractional voltage drops across the above three parts with respect to the total voltage of the MISS device are calculated under dark and illuminated conditions. It is shown that the minority carrier charge, generated by illumination and stored at the insulator-semiconductor interface, reduces the switching voltage below that under the dark condition which corresponds to entire punch-through.

An advanced intelligent network (IN) provides service management along with telecommunication services, and has a two-layer architecture, i.e., a transmission layer and an intelligent layer. An advanced IN's programmability is achieved by a service-independent platform of nodes in the intelligent layer, and service-dependent software called logic programs. In contrast to telecommunication services, models for service management have not yet been established. This paper presents both execution and specification models for service management. The execution model is composed of three hierarchies that apply to various kinds of management operation. The specification model has the capability to define the details of data items. The specification language for service management is also proposed. Simulation on dynamic SQL based DBMS solved that; (1) Logic programs for service management can be made small size on the model, and (2) To provide efficient database operation, programmability must be enhanced if service management includes table with variable number of field operation.