In this paper a third-order inter-modulation cancellation technique using Pre-Post-Distortion is proposed to design a wideband high linear low-power LNA in deep submicron. The IM3 cancellation is achieved by post-distorting signal inversely after it is pre- distorted in the input trans-conductance stage during amplification process. The operating frequency range of the LNA is 800 MHz–5 GHz. The proposed technique increases input-referred third-order intercept point (IIP3) and input 1 dB Compression point (P-1 dB) to 12–25 dBm and -1.18 dBm, respectively. Post layout simulation results show a noise figure (NF) of 4.1–4.5 dB, gain of 13.7–13.9 dB and S11 lower than -13 dB while consumes 8 mA from 1.2 V supply. The LNA is designed in a 65 nm standard CMOS technology. The layout schematic shows that the LNA occupies 0.150.11 mm2 of silicon area.