We have developed 100 nm node CMOS technology, consisting of a 65 nm gate length and a 1.6 nm gate oxide thickness. The major transistor design issue is how to maintain drive current at supply voltage of only 1.0 V, while suppressing standby leakage current to a practical level for system-on-a-chip applications. In order to obtain thinner electrical equivalent oxide thickness with well-suppressed gate leakage current, we have adopted radical nitridation and poly-SiGe. We have also utilized low-energy ion-implantation, low-temperature CVD, and spike RTA technology to overcome the short channel effect. With supply voltage of 1.0 V, our generic transistor shows the drive current of 520/196 µA/µm with the off current of 0.5 nA/µm. We also designed high-speed (Ioff=5 nA/µm), ultrahigh-speed (Ioff=30 nA/µm) transistors, and low-standby power (Ioff=5 pA/µm), all of which can be deployed on the same chip.