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Atsushi A. YAMAGUCHI Kohei KAWAKAMI Naoto SHIMIZU Yuchi TAKAHASHI Genki KOBAYASHI Takashi NAKANO Shigeta SAKAI Yuya KANITANI Shigetaka TOMIYA
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect density, and the assumption is not necessarily valid. In 2016, we proposed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. In this study, we have applied the method to InGaN quantum-well active layers and have estimated the IQE values and their excitation carrier-density dependence in the layers.