In summary, we successfully fabricated the nonvolatile hybrid polymer 4F2 memory-cell. It was based on bistable state, which was observed in PS layer that is containing a Ni nanocrystals capped with NiO tunneling barrier sandwiched by Al electrodes. The current conduction mechanism for polymer memory-cell was demonstrated by fitting the I-V curves. The electrons were charged and discharged on Ni nanocrystals by tunneling through the NiO tunneling barrier. In addition, the memory-cell showed a good and reproducible nonvolatile memory-cell characteristic. Its memory margin is about 1.410. The retention-time is more than 105 seconds and the endurance cycles of program-and-erase is more than 250 cycles. Furthermore, Thefore, polymer memory-cell would be good candidates for nonvolatile 4F2 cross-bar memory-cell.