1-1hit |
Toshihiko BABA Yukiaki YOGO Katsumasa SUZUKI Fimio KOYAMA Kenichi IGA
We have achieved the room temperature cw lasing operation of GaInAsP/InP surface emitting lasers for the first time. By employing a buried heterostructure with 1.3 µm range active region and a MgO/Si heat sink mirror, cw operation was obtained up to 14 with the threshold current of 22 mA.