We have systematically grown and characterized (Bi, Pb)2Sr2CaCu2Oy (BPSCCO) single crystals, and investigated the tunneling properties and the intrinsic Josephson effects of the single crystals as a function of the nominal composition of Pb, x. It was observed that Pb atoms (ions) were monotonically substituted for Bi atoms (ions) in the (Bi, Pb)-O layers of the crystals with increasing x in a region of 0x0.5, while the modulation structure was maintained in a range of 0x0.3, but disappeared in x0.3, accompanying the decrease of c-lattice parameter and Tc. Moreover, it was found that the energy gaps Δ of BPSCCO depend hardly on x for x0.5, which are about 24 meV, so that the Pb-induced electronic change in the (Bi, Pb)-O layer do not perturb the electronic states in this superconducting system. And it was confirmed that the currentvoltage characteristics of the BPSCCO single crystals had multiple resistive branches corresponding to a series array of several hundreds Josephson junctions, and showed Shapiro steps and zero-crossing steps with the voltage separation of the order of mV resulting from the phase locking of about a hundred Josephson junctions among them under microwave irradiation. The estimated number of junctions gave the concept that the intrinsic Josephson junctions consist of the superconducting block layers and the insulating layers in the BPSCCO single crystals.

The size dependent properties of the intrinsic Josephson junctions in Bi2Sr2CaCu2Oy single crystal mesas in the external magnetic field are studied. The mesas of (1-140) µm long with 7-29 junctions were fabricated and their current-voltage characteristics were measured in external magnetic field applied parallel to the CuO2 layers up to 0.16 T. In zero magnetic field, multiple resistive branches with large hysteresis were observed in the current-voltage characteristics for the fabricated mesas. Almost identical critical currents were also observed for all the junctions in each mesa. With applied magnetic field, Ic of the longer mesas showed a complex magnetic field dependence as compared to that of the short mesas (of about 1 µm in length). It was observed that the lower critical magnetic field of the junctions decreased and approached a constant value with increasing number of junctions and also with increasing length of the junctions. Similar magnetic behavior was obtained by numerical simulations based on coupled sine-Gordon equations for such stacked junctions.

Almost stoichiometric YBa2Cu3O7-δ(110) or (103) and SrTiOx(110) films, and multilayer films consisting of them have successfully been grown epitaxially on hot SrTiO3 substrates by 90off-axis rf magnetron sputtering with facing targets. Their whole composition, compositional distribution in depth, crystallinity and surface morphology were examined by inductively coupled plasma spectroscopy, Auger electron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy or atomic force microscope, respectively. When any YBa2Cu3O7-δ film was exposed to air after deposition, a Ba-rich layer was formed in a near surface region of the film. However, such a compositional distribution in depth of the film was improved by in situ deposition of a SrTiOx film on it. Moreover, the surface roughness of the YBa2Cu3O7-δ film was improved by predeposition of a SrTiOx film under it. On the basis of these results, both YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiO3(sub.) and YBa2Cu3O7-δ/SrTiOx/YBa2Cu3O7-δ/SrTiOx/SrTiO3(sub.) multilayer films with average surface roughness of 3 nm were grown reproducibly, which had uniform compositional distribution throughout the depth of the film except a near surface region of the top YBa2Cu3O7-δ layer. A new 222 structure described by Sr8Ti8O20 (Sr2Ti2O5) with a long range ordered arrangement of oxygen vacancies was formed in the SrTiOx films deposited epitaxially on YBa2Cu3O7-δ films.