This paper presents the effect of stress on device degradation in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to stud bumping. Stud bumping above the MOSFET region generates interface traps at the Si/SiO2 interface and results in the degradation of transconductance in N-channel MOSFETs. The interface traps are apparently eliminated by both nitrogen and hydrogen annealing. However, the hot-carrier immunity after hydrogen annealing is one order of magnitude stronger than that after nitrogen annealing. This effect is explained by the termination of dangling bonds with hydrogen atoms.

In this paper, it is presented that the experimental results of the magnetic bubble propagation in dual conductor current access test circuits, where the bubble-driving fields can be generated by applying the bipolar pulse currents to the apertured conducting sheets. Under the driving conditions that the current density for the first conducting sheet (I1) was at 0.5 mA/µm, for the second conducting sheet (I2) was at 1 mA/µm, and the frequency of these currents was at 200 kHz, the bias margin for the propagation normal to the currents flow was obtained as much as 5 Oe.