Experimental results on the superconducting three-terminal devices Using Bi-system High-Tc Superconductors were reported. The VCJJ (Variabel critical-current-type Josephson junction devices) using the thermal effect (VCJJ) and a dual gate Josephson device of a new current-injection type are described. The basic technology and problems for high-Tc three-terminal devices are briefly discussed.

Sandwich-type Josephson junctions with the structure Bi2Sr2Ca1Cu2Ox/Bi2Sr2Cu1Oy/Bi2Sr2Ca1Cu2Oz (BSCCO/BSCO/BSCCO), have been fabricated and their characterstics determined. The BSCO barrier layer, which is characterized by a crystal structure close to that of the BSCCO electrode layer, is a normal conductor at 4.2 K. Superconductor/normal-conductor/superconductor (S/N/S) type current-voltage characteristics are obtained with these junctions. Distinctive Shapiro steps are observed when they are exposed to microwave radiation. An oscillating behavior of each step in their I-V characteristics are confirmed for increased microwave power. The critical current, Ic, is found to be proportional to (1-T/Tc)2 in the neighborhood of Tc. These results coincide with the ones observed with conventional S/N/S junctions.