We have found out the effects of surfactant addition to developer on the developing characteristics: very uniform developing, scum-free developing, contact hole formation at lower exposure energy and substrate surfaces protection. Although these are excellent effects required for ULSI manufacturing, we have also discovered the problem that surfactant added to developer remains after the developing process. We has successfully established two effective methods for removing residual surfactant: the addition of 0.15 wt% hydrogen peroxide to surface-active developer, and 1-minute ozone-added ultrapure water rinsing at room temperature. We can therefore make best use of the developing characteristics of surface-active developer without any degradations.