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Naoki SHIRAMATSU Naoko IWASAKI Masaki YAMAKAWA Shuji IWATA Hitoshi KUMA Takamitsu NAGASE Narutoshi HAYASHI
Feasibility of a color shutter using ferroelectric liquid crystal polymer panel and a field sequential ultra high-resolution CRT with the color shutter as a color field-switching device was studied. The color shutter consists of ferroelectric liquid crystal polymer panels and color polarizers. First, evaluation indices of the color shutter, such as the color gamut, the average transmittance and the white chromaticity shift, were formulated, and the simulation of evaluation indices was examined, where the spectral transmittance characteristics of the polarizer were changed in steps. It was indicated that there was a tradeoff between the color gamut and the average transmittance of the color shutter, and the shutter configuration that provides 0.096 (63% to NTSC) color gamut and 4.3% average transmittance was selected based on the simulation results. Next, the three-line simultaneous scanning method of the monochrome CRT was improved so that the disturbance due to the raster modulation was eliminated by averaging the distribution of beam luminance apparently. To confirm results of the study, the prototype of 21-inch screen size was produced, and the following display characteristics was obtained: luminance of 71 cd/m2, contrast ratio of 146:1 and color gamut of 0.096 (63% to NTSC) under the standard room lighting environment.
Toshinari OGIWARA Jun-ichi TAKAHASHI Hitoshi KUMA Yuichiro KAWAMURA Toshihiro IWAKUMA Chishio HOSOKAWA
We carried out degradation analysis of a blue phosphorescent organic light emitting diode by both impedance spectroscopy and transient electroluminescence (EL) spectroscopy. The number of semicircles observed in the Cole-Cole plot of the modulus became three to two after the device was operated for 567 hours. Considering the effective layer thickness of the initial and degraded devices did not change by degradation and combining the analysis of the Bode-plot of the imaginary part of the modulus, the relaxation times of emission layer and hole-blocking with electron transport layers changed to nearly the same value by the increase of the resistance of emission layer. Decay time of transient EL of the initial device was coincident with that of the degraded one. These phenomena suggest that no phosphorescence quenching sites are generated in the degraded device, but the number of the emission sites decrease by degradation.