This paper presents an accurate and semi-physical MOSFET substrate current model suitable for analog circuit simulations. The proposed model is valid over a wide range of the electric field present in MOSFET devices and is continuous from cut off region to saturation region. The developed model was implemented into the circuit simulator, SPICE3. Benchmark of the developed model was achieved by making comparisons between the measured data and the simulated data for MOSFET devices, push-pull CMOS inverters, a regulated cascode CMOS operational amplifier. The experimental results showed that the developed model was more accurate and computationally efficient than the conventional models.