Slit-Mura defect is a notorious yield flaw of color filters. In this study, an innovative non-contact in-line optical inspection method is developed to detect low contrast slit Mura through quantitative measurements by a spectrometer. Using the features of either thickness or chromaticity profiles across a slit Mura, a thickness difference from 21 nm to 41 nm of color filters can be differentiated accurately. Thus, the quality of color filters can be accessed in-line during the manufacturing process TFT-LCDs.

An improved methodology, based on the genetic algorithm, is developed to design thermal-via structures and circuit parameters of advanced InGaP and InGaAs collector-up heterojunction bipolar transistors (C-up HBTs), which are promising miniature high-power amplifiers (HPAs) in cellular communication systems. Excellent simulated and measured results demonstrate the usefulness of this technique.