The characteristics of high-performance InP-based monolithically integrated single and multiple channel photoreceivers with an InGaAs p-i-n photodiode and InAlAs/InGaAs HBTs, realized by one-step molecular beam epitaxy, are described. The monolithically integrated photoreceiver includes an integrated spiral inductor following the p-i-n diode at the input of the transimpedance amplifier to enhance the circuit response at high frequencies. Crosstalk of the multi-channel photoreceiver arrays is greatly reduced by applying both a metal ground shield and dual bias. The maximum measured -3 dB bandwidth of a single-channel integrated p-i-n/HBT photoreceiver is 19.5 GHz and the minimum crosstalk of the photoreceiver arrays, with an individual channel bandwidth of 11.5 GHz, is 36 dB. At these performance levels, these OEICs represent the state-of-the-art in multichannel integrated photoreceiver arrays.