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[Author] Katsumi FURUYA(2hit)

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  • A New Muscle-Equivalent Phantom for SAR Estimation

    Katsumi FURUYA  Lira HAMADA  Koichi ITO  Haruo KASAI  

     
    LETTER

      Vol:
    E78-B No:6
      Page(s):
    871-873

    We have developed a new muscle-equivalent phantom which is composed of water, polyethylene powder, NaCl, agar and so on. This phantom can maintain its shape by itself and it is easy to make and handle. The complex permittivity of the phantom is very similar to that of the actual muscle tissue at UHF. The specific heat and thermal conductivity are suitable for the thermographic method.

  • An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor

    Katsumi FURUYA  Takeyoshi SUGAYA  Kazuhiro KOMORI  Masahiro ASADA  

     
    PAPER-Antennas

      Vol:
    E91-B No:6
      Page(s):
    1800-1805

    As THz wave has the advantages of enough resolution and penetration to materials, it has been examined to be used for the imaging system. The propagation distance of THz wave is limited to be short. That is also the advantage for application to the indoor wireless communication etc. For the achievement of the ultra-high frequency oscillator (and concurrently transmitter) device, the properties of small, electronic excitation, the antenna constructed and being on the wafer are important. For the purpose, the Negative differential resistance Dual channel transistor (NDR-DCT) proposed by AIST is utilized. In this paper, as an initial theoretical analysis, we simulated the oscillation frequency of this device at about 100 GHz-1THz within the Terahertz band on which the above applications was expected. The equivalent circuit model of NDR-DCT was shown based on the analogy with the resonant tunnelling diode (RTDs), and the antenna as the resonance circuit part was designed by the numerical analysis. The possibility of the THz oscillation of this device was confirmed. The slit reflector that we proposed can realize the slot antenna on the device effectively and is suitable for three terminal structure semiconductor. its manufacturing is relatively easy.