1-2hit |
For clarifying theoretically the behaviour of GaAs/Al1-mGamAs heterojunction-CCD, one dimensional analysis of the channel potential is done, and the heterojunction-CCD charge-transfer process between two transfer-electrodes is represented by analytical method.
A CCD with resistive input gate and this design are proposed for improving linearity of the dynamic injection method. Fundamental performances of the device are analyzed theoretically.