We have fabricated ferroelectric Pb(Zr,Ti)O3 (PZT) thin films using low-pressure consolidation process during the sol-gel method. Drastic improvements of electrical properties have been obtained for the PZT thin films fabricated with low-pressure consolidation process. A remanent polarization (Pr) of 37 µC/cm2 and a coercive field (EC) of 64 kV/cm have been achieved. In addition, the leakage current of the PZT films fabricated using low-pressure consolidation is 102 times smaller than that of the films fabricated with the usual process of sol-gel method. It is also found that the low-pressure consolidation process is effective on improvements of electrical properties of PZT films fabricated at lower crystallization temperatures and with sub-100 nm thickness.